BU209

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU209 DESCRIPTION ·High Reverse Voltage ·High Peak Power ·Collector Current- IC = 4A APPLICATIONS ·Designed for use in horizontal deflection circuits in color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC≤95℃ Junction Temperature Storage Temperature VALUE 1700 800 5 4 7.5 2.5 4 12.5 115 -65~115 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.6 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU209 MAX UNIT V(BR)CES Collector-Emitter Breakdown Voltage IC= 1mA 1700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.3A B 5.0 V VBE(sat) hFE Base-Emitter Saturation Voltage IC= 3A; IB= 1.3A B 1.5 V DC Current Gain IC= 3A ; VCE= 5V 2.25 COB Output Capacitance IE= 0; VCB= 10V;ftest= 1MHz 125 pF fT Current-Gain—Bandwidth Product IC= 0.1A;VCE= 5V;ftest= 5MHz 7 MHz Switching Times μs μs ts Storage Time IC= 3A; IB= 1.8A;LB= 10μH B 10 tf Fall Time 0.7 isc Website：www.iscsemi.cn 2