INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2506DF
DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCES VCEO VEBO IC ICM IB
B
PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range
VALUE 1500 700 7.5 5 8 3 5 45 150 -65~150
UNIT V V V A A A A W ℃ ℃
IBM PC TJ Tstg
SYMBOL
PARAMETER Thermal Resistance,Junction to Case
MAX 2.8
UNIT ℃/W
Rth j-c
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2506DF
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; IB= 0,L= 25mH
700
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.79A
B
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.79A
B
1.1 1.0 2.0 95 208
V
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 7.5V ; IC= 0
mA
IEBO
Emitter Cutoff Current
mA
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 5V
12
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
3.8
7.5
VECF
C-E Diode Forward Voltage
IF= 3A
2.0
V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
47
pF
Switching times μs μs
tstg tf
Storage Time
Fall Time
IC= 3A, IB(end)= 0.67A; CFB= 9.4nF LC= 1.35mH; LB= 8μH; -VBB= 4V; (-dIB/dt= 0.45A/μs)
6.0
0.5
isc Website:www.iscsemi.cn
2
很抱歉,暂时无法提供与“BU2506DF”相匹配的价格&库存,您可以联系我们找货
免费人工找货