BU2507AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2507AF DESCRIPTION ·High Switching Speed ·High Voltage APPLICATIONS ·Designed for use in horizontal deflection circuits of coluor TV receivers and computer monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCESM VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 7.5 8 15 4 6 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT K/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2507AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 4A ;IB= 0.8A 5.0 V Base-Emitter Saturation Voltage IC= 4A ;IB= 0.8A VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ VEB= 7.5V; IC= 0 1.1 1.0 2.0 1.0 V Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 100mA; VCE= 5V 17 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 5 7 9 COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1MHz 68 pF Switching times μs μs tstg tf Storage Time IC= 4A, IB(end)= 0.7A; LB= 6 μ H; -VBB= 4V B 6.0 Fall Time 0.5 isc Website：www.iscsemi.cn