BU2508D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508D DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 7.5 8 15 4 6 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2508D TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat)-1 VCE(sat)-2 VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.1A 5.0 V Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.29A IC= 4.5A; IB= 1.7A VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ VEB= 7.5V; IC= 0 140 1.0 V Base-Emitter Saturation Voltage 1.3 1.0 2.0 390 V Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 7 23 hFE-2 DC Current Gain IC= 4.5A ; VCE= 1V 4 VECF COB C-E Diode Forward Voltage IF= 4.5A 80 2.0 V Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz pF Switching times μs μs tstg tf Storage Time IC= 4.5A , IB(end)= 1.1A; LB= 6μH -VBB= 4V; (-dIB/dt= 0.6A/μs) Fall Time 6.0 0.6 isc Website：www.iscsemi.cn 2