BU2520D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520D DESCRIPTION ・With TO-3PN package ・High voltage,high speed ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current(DC) Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 10 25 6 9 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2520D CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO VCEsat Emitter-base breakdown voltage IB=600mA; IC=0 IC=6A; IB=1.2A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A VCE=ratedVCE; VBE=0 Tj=125℃ VEB=7.5V; IC=0 100 1.3 1.0 2.0 300 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 23 hFE-2 VF DC current gain IC=6A ; VCE=5V IF=6A 5 7 10 Diode forward voltage 2.2 V CC Collector capacitance IE=0 ;VCB=10V;f=1MHz 115 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2520D Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3