BU2520DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2520DX DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·For use in horizontal deflection circuits of large screen coluor TV receivers ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 10 25 6 9 45 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT K/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES IEBO hFE-1 hFE-2 VECF COB PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS IC= 100mA ;IB= 0,L= 25mH IE= 600mA ;IC= 0 IC= 6A ;IB= 1.2A IC= 6A ;IB= 1.2A VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ VEB= 7.5V; IC= 0 IC= 1A ; VCE= 5V IC= 6A ; VCE= 5V IF= 6A IE= 0 ; VCB= 10V;ftest= 1MHz 5 100 MIN 800 7.5 BU2520DX TYP. MAX UNIT V 13.5 5.0 1.1 1.0 2.0 300 13 7 9.5 2.2 115 V V V mA mA V pF Switching times Storage Time Fall Time 5.5 0.5 μs μs tstg tf IC= 6A , IB(end)= 1.0A; LB= 5.3μH -VBB= 4V; (-dIB/dt= 0.8A/μs) isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2520DX isc Website：www.iscsemi.cn