INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2523DF
DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode
APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 1500 800 7.5 11 29 7 10 45 150 -55~150
UNIT V V V A A A A W ℃ ℃
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT K/W
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2523DF
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ;IB= 0,L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA ;IC= 0
7.5
13.5
V
VCE(sat) VBE(sat) ICES
Collector-Emitter Saturation Voltage
IC= 5.5A ;IB= 1.1A
B
5.0
V
Base-Emitter Saturation Voltage
IC= 5.5A ;IB= 1.1A
B
1.0 1.0 2.0 80 170
V
Collector Cutoff Current
VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ VEB= 6V; IC= 0
mA
IEBO
Emitter Cutoff Current
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
12
hFE-2
DC Current Gain
IC= 5.5A ; VCE= 5V
5
10.8
VECF
C-E Diode Forward Voltage
IF= 5.5A
2.2
V
isc Website:www.iscsemi.cn
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