BU2523DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2523DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-peak Base Current-Continuous Base Current-peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 11 29 7 10 45 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.8 UNIT K/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2523DF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA ;IC= 0 7.5 13.5 V VCE(sat) VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 5.5A ;IB= 1.1A B 5.0 V Base-Emitter Saturation Voltage IC= 5.5A ;IB= 1.1A B 1.0 1.0 2.0 80 170 V Collector Cutoff Current VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0;TC=125℃ VEB= 6V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 12 hFE-2 DC Current Gain IC= 5.5A ; VCE= 5V 5 10.8 VECF C-E Diode Forward Voltage IF= 5.5A 2.2 V isc Website：www.iscsemi.cn