BU2525A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525A DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current(DC) Base current -peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 5.0 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A VCE=rated ;VBE=0 Tj=125℃ VEB=7.5V; IC=0 1.3 1.0 2.0 1.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=0.1A ; VCE=5V 6 13 26 hFE-2 DC current gain IC=8A ; VCE=5V 5 7 10 CC Collector capacitance IE=0, VCB=10V;f=1MHz 145 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3