BU2525DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2525DF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V A A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2525DF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6 A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6 A VCE=BVCES; VBE=0 Tj=125℃ VEB=6V; IC=0 72 110 1.1 1.0 2.0 218 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1.0A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V 5 7 9.5 VF Diode forward voltage IF=8A 1.6 2.0 V CC Collector capacitance IE=0, f=1MHz;VCB=10V 145 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2525DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3