BU2527AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2527AF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Base current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2527AF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A VCE=BVCES; VBE=0 Tj=125℃ VEB=7.5V; IC=0 1.3 0.25 2.0 0.25 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=6A ; VCE=5V 5 9 CC Collector capacitance VCB=10V;IE=0; f=1.0MHz 145 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2527AF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3