BU2527DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2527DF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 12 30 8 12 45 150 -65~150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2527DF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ;IB=1.6A VCE=BVCES; VBE=0 Tj=125℃ VEB=6V; IC=0 110 1.1 1.0 2.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V 5 10 CC Collector capacitance IE=0 ; VCB=10V; f=1MHz 145 pF VF Diode forward voltage IF=8A 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2527DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3