BU2708AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2708AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 8 A Collector Current-Peak 15 A IB B Base Current- Continuous 4 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2708AF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 825 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 1.0 1.0 2.0 70 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125℃ VEB= 6V ; IC= 0 mA IEBO Emitter Cutoff Current μA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 21 hFE-2 DC Current Gain IC= 4A ; VCE= 1V 3 7.3 isc Website：www.iscsemi.cn 2