Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2708DF
DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers.
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE 1700 825 8 15 4 6 45 150 -65~150 UNIT V V A A A A W ℃ ℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
BU2708DF
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
7.5
13.5
V
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=1.33 A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=1.33 A VCE=BVCES; VBE=0 Tj=125℃ IC=1A ; VCE=5V 15
1.0 1.0 2.0
V
ICES
Collector cut-off current
mA
hFE-1
DC current gain
hFE-2
DC current gain
IC=4A ; VCE=1V
3
6
7.3
VF
Diode forward voltage
IF=4A
1.6
V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2708DF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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