BU2708DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2708DF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base CONDITIONS VALUE 1700 825 8 15 4 6 45 150 -65~150 UNIT V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2708DF TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=1.33 A 1.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=1.33 A VCE=BVCES; VBE=0 Tj=125℃ IC=1A ; VCE=5V 15 1.0 1.0 2.0 V ICES Collector cut-off current mA hFE-1 DC current gain hFE-2 DC current gain IC=4A ; VCE=1V 3 6 7.3 VF Diode forward voltage IF=4A 1.6 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2708DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3