BU2720DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2720DF DESCRIPTION ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base Collector current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 1700 825 10 25 10 14 45 150 -65~150 UNIT V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2720DF TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 V VCEsat Collector-emitter saturation voltage IC=5.5A ;IB=1.38 A 1.0 V VBEsat Base-emitter saturation voltage IC=5.5A ;IB=1.38 A VCE=BVCES; VBE=0 Tj=125℃ VEB=7.5V; IC=0 100 1.0 V ICES Collector cut-off current 1.0 2.0 mA IEBO Emitter cut-off current 300 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 22 hFE-2 DC current gain IC=5.5A ; VCE=1V 4 5.5 7.5 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU2720DF Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3