BU2725DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2725DF DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 12 A ICM IB B Collector Current-Peak 30 A Base Current- Continuous 12 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 20 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2725DF TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A B 0.95 1.0 2.0 110 V ICES Collector Cutoff Current VCE= 1700V ; VBE= 0 VCE= 1700V ; VBE= 0; TC=125℃ VEB= 7.5V ; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 19 hFE-2 DC Current Gain IC= 7A ; VCE= 1V 3.8 7.8 VECF C-E Diode Forward Voltage IF= 7A 2.2 V isc Website：www.iscsemi.cn 2