BU2727AW

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727AW DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1700 825 7.5 12 30 12 25 125 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU2727AW TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 25mH 825 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.91A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.91A B 0.95 1.0 2.0 1.0 V ICES Collector Cutoff Current VCE= 1700V; VBE= 0 VCE= 1700V; VBE= 0; TC=125℃ VEB= 7.5V ; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 12 35 hFE-2 DC Current Gain IC= 5A ; VCE= 1V 5.5 11 isc Website：www.iscsemi.cn 2