BU323AP

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU323AP DESCRIPTION ·With TO-3PN package ·DARLINGTON ·Low collector saturation voltage APPLICATIONS ·Designed for automotive ignition,switching regulator and motor control applications. PINNING(see fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Tc=25℃) SYMBOL VCEO(SUS) VCEV VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open base Open base Open collector CONDITIONS VALUE 400 475 6 10 16 3 125 -65~200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICER IEBO ICBO hFE-1 hFE-2 hFE-3 VBE VF Cob PARAMETER Collector-emitter sustaining voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain DC current gain DC current gain Base-emitter on voltage Diode forward voltage Output capacitance CONDITIONS IC=0.2A; IB=0;L=10mH IC=3A; RBE=100Ω;L=500μH IC=3 A;IB=60mA IC=6A;IB=120m A IC=10A;IB=300m A IC=6A;IB=120m A IC=10A;IB=300m A VCE=Rated;VBE=100Ω VEB=6V; IC=0 VCB=Rated; IE=0 IC=3A ; VCE=6V IC=6A ; VCE=6V IC=10A ; VCE=6V IC=10A ; VCE=6V IF=10A VCB=10V,IE=0;fT=100kHz 2 165 300 150 50 550 350 150 MIN 400 475 TYP. BU323AP MAX UNIT V V 1.5 1.7 2.7 2.2 3 1 40 1 V V V V V mA mA mA 2000 2.5 3.5 350 V V pF Switching times ts tf Storage time Fall time 7.5 5.2 15 15 μs μs IC=6A ; IB1=IB2=0.3A VCC=12V ; 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU323AP Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3