BU326

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU326 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 375V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.5V(Max.) @ IC= 2.5A APPLICATIONS ·Designed for use in operating in color TV receivers chopper supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 800 375 10 6 8 3 75 200 -65~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.33 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage CONDITIONS IC= 0.1A; IB= 0; L= 25mH IC= 2.5A; IB= 0.5A IC= 4A; IB= 1.25A IC= 2.5A; IB= 0.5A IC= 4A; IB= 1.25A VCE=800V; VBE= 0 VEB= 10V; IC= 0 IC= 1A; VCE= 5V IC= 0.2A; VCE= 10V, f= 1.0MHz 4 25 MIN 375 TYP. BU326 MAX UNIT V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES IEBO hFE fT 1.5 3.0 V V Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product 1.4 1.6 1.0 10 V V mA mA MHz Switching Times Turn-On Time Storage Time IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V 0.5 3.5 μs μs μs ton tstg tf Fall Time 0.5 isc Website：www.iscsemi.cn 2