BU406D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BU406D BU407D · Absolut maximum ratings (Ta=25℃) SYMBOL VCBO PARAMETER BU406D Collector-base voltage BU407D BU406D VCEO VEBO IC ICM IB Ptot Tj Tstg Collector-emitter voltage BU407D Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Maximum operating junction temperature Storage temperature TC=25℃ Open collector Open base 150 6 7 10 4 60 150 -65~150 V A A A W ℃ ℃ Open emitter 330 200 V CONDITIONS VALUE 400 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 2.08 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BU406D BU407D MIN TYP. MAX UNIT BU406D VCEO(SUS) Collector-emitter sustaining voltage BU407D IC=100mA ; IB=0 200 V 150 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.65A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.65A 1.3 V BU406D ICEV Collector cut-off current BU407D VCE=400V; VBE=-1.5V 15 VCE=330V; VBE=-1.5V mA IEBO Emitter cut-off current VEB=6.0V; IC=0 400 mA hFE DC current gain IC=2A ; VCE=5V 15 VF Diode forward voltage IF=5A 1.5 V fT Transition frequency IC=0.5A ;VCE=10V;f=1.0MHz IC=5A ;VCC=40V IBend=0.65A 10 MHz tf Fall time 0.75 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU406D BU407D Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3