BU406H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU406H DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 400ns(Max.) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max.)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Repetitive Collector Current- Peak (10ms) Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 400 200 6 7 10 15 4 60 150 -55~150 UNIT V V V A A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.08 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU406H MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.8A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 5.0 0.1 1.0 1.0 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE=250V; VBE= 0 VCE=250V; VBE= 0;TC= 150℃ VEB= 6V; IC= 0 mA IEBO Emitter Cutoff Current mA fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 10 MHz tf Fall Time IC= 5A; IB1= -IB2= 0.8A 0.4 μs isc Website：www.iscsemi.cn 2