BU407F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU406F/407F DESCRIPTION ·High Voltage ·Fast Switching Speed: toff= 0.75μs (Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER Collector-Emitter Voltage VBE=0 BU406F BU407F BU406F VCEO Collector-Emitter Voltage BU407F VEBO IC ICM IB B VALUE 400 UNIT VCES V 330 200 V 150 5 7 15 4 6 18 150 -65~150 V A A A A W ℃ ℃ Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 7 55 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BU406F IC= 200mA ; IB= 0; L= 25mH BU407F VCE(sat) VBE(sat) ICES Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current BU406F ICES Collector Cutoff Current BU407F IEBO fT toff Emitter Cutoff Current Current-Gain—Bandwidth Product Turn-Off Time IC= 5A; IB= 0.5A B BU406F/407F CONDITIONS MIN 200 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 150 1.0 1.2 0.05 1 0.1 1 mA 0.1 1 1 4 0.75 mA MHz μs V V mA IC= 5A; IB= 0.5A B VCE= VCESmax; VBE= 0 VCE= 250V; VBE= 0 VCE= 350V; VBE= 0;TJ=150℃ VCE= 200V; VBE= 0 VCE= 200V; VBE= 0;TJ=150℃ VEB= 5V; IC= 0 IC= 0.5A ; VCE= 10V IC= 5A; IB1= -IB2= 0.5A isc Website：www.iscsemi.cn 2