BU426

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU426 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 375V(Min) ·High Switching Speed APPLICATIONS ·Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 800 800 375 10 6 10 2 3 70 150 -65~150 UNIT V V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.1 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU426 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L= 25mH B 375 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 ICES Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 3.0 V Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A IC= 4A; IB= 1.25A B 1.4 V Base-Emitter Saturation Voltage 1.6 1.0 2.0 10 V Collector Cutoff Current VCE=800V; VBE= 0 VCE=800V; VBE= 0;TJ=125℃ VEB= 10V; IC=0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 0.6A ; VCE= 5V 15 60 Switching Times μs μs μs ton tstg tf Turn-On Time IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V 0.15 0.6 Storage Time 3.5 Fall Time isc Website：www.iscsemi.cn 2