BU4507AX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4507AX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 8 15 4 6 45 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4507AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A B 1.01 1.0 2.0 1.0 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ VEB= 7.5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 12 hFE-2 DC Current Gain IC= 4A; VCE= 5V 4.2 7.3 Switching times (16kHz line deflection circuit) Storage Time IC= 4A, IB1= 0.8A; IB2= -2.1A tf Fall Time 0.21 μs 2.4 μs tstg isc Website：www.iscsemi.cn 2