BU4508DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 8 A Collector Current-Peak 15 A IB Base Current- Continuous 4 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 6 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4508DF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) VBE(sat) ICES Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 3.0 V Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ IC= 0.5A; VCE= 5V 7 1.03 1.0 2.0 V Collector Cutoff Current mA hFE-1 DC Current Gain hFE-2 DC Current Gain IC= 5A; VCE= 5V 4.2 7.3 VECF C-E Diode Forward Voltage IF= 5A 2.2 V Switching times μs μs tstg tf Storage Time IC= 5A, IB1= 1.0A; IB2= -2.5A Fall Time 3.75 0.4 isc Website：www.iscsemi.cn 2