BU4525AX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4525AX DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7.5 V IC ICM Collector Current- Continuous 12 A Collector Current-Peak 30 A IB B Base Current- Continuous 8 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 12 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.8 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU4525AX TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 9A; IB= 2.25A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 9A; IB= 2.25A B 1.06 1.0 2.0 0.1 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ VEB= 6V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 12 hFE-2 DC Current Gain IC= 9A; VCE= 5V 4.2 7.6 Switching times (16kHz line deflection circuit) Storage Time IC= 9A, IB1= 1.8A; IB2= -4.5A tf Fall Time 0.55 μs 4.5 μs tstg isc Website：www.iscsemi.cn 2