BU4530AW

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4530AW DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV rceivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 800 7.5 16 40 10 15 125 150 -55~150 UNIT V V V A A A A W ℃ ℃ IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCE(sat) VBE(sat) ICES hFE-1 hFE-2 PARAMETER Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC= 100mA; IB= 0; L= 25mH IE= 1mA; IC= 0 IC= 10A ;IB= 2.22A IC= 10A ;IB= 2.22A VCEV=1500V,VBE(off)=0 VCEV=1500V,VBE(off)=0;TC=125℃ IC= 1A ; VCE= 5V IC= 10A ; VCE= 5V 4.8 MIN 800 7.5 BU4530AW TYP. MAX UNIT V V 3.0 1.01 1.0 2.0 12 8.5 V V mA Switching times; Resistive load Storage Time IC= 9A; IB1= 1.8A; IB2= -4.5A tf Fall Time 0.20 0.26 μs 3.0 4.0 μs ts isc Website：www.iscsemi.cn