BU500

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU500 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage APPLICATIONS ・Designed for use in large screen color deflection circuits. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 6 16 4 75 -65~150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.66 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBE ICBO ICEX IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.5A; IB=0;L=10mH IE=100mA; IC=0 IC=4.5A;IB=2A IC=4.5A;VCE=5V VCE=1000V;VBE=-2V VCE=1500V;VBE=-2V VEB=4V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V 8 3.0 MIN 700 5 TYP. BU500 MAX UNIT V V 1.0 1.3 0.02 1.0 10 36 V V mA mA mA Switching times ts tf Storage time IC=4.5A ;IB1=-IB2=1.5A VCC=100V ; Fall time 1.0 1.2 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU500 Fig.2 Outline dimensions 3