BU505

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU505 DESCRIPTION ・With TO-220C package ・High voltage,high speed-switching APPLICATIONS ・For horizontal deflection circuits of color TV receivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (peak) Base current Base current(peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 2.5 4 1 2 75 150 -65~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.67 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU505 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.9 A 1.3 V hFE DC current gain IC=0.1A ;VCE=5V VCE =1500V;VBE=0; TC=125℃ VEB=5V; IC=0 6 30 0.15 1.0 1.0 ICES Collector cut-off current mA IEBO Emitter cut-off current mA fT Transition frequency IC=0.1A ;VCE=5V 7 MHz Is/b Second breakdown current VCE=120V;t=200μs 2 A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU505 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3