BU505D

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU505D DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V(Min.) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage-VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 5 2.5 4 2 4 75 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.67 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU505D MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A B 1.0 V VBE(sat) ICES Base-Emitter Saturation Voltage IC= 2A; IB= 0.9A B 1.3 0.15 1.0 1.0 V Collector Cutoff Current VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃ VEB= 5V; IC= 0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 0.1A; VCE= 5V 6 30 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 7 MHz VECF C-E Diode Forward Voltage IF= 2A 1.8 V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 65 pF Switching Times; Resistive load μs μs tstg Storage Time IC= 2A , IB(end)= 0.9A;Vdr= -4V LB= 25μH 9.5 tf Fall Time 0.85 isc Website：www.iscsemi.cn 2