BU506

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-220C package ・High voltage ・High-speed switching APPLICATIONS ・Horizontal deflection circuits of colour TV receivers. ・Line-operated switch-mode applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BU506 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Base current(peak) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 6 5 8 3 5 100 150 -65-150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU506 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat Collector-emitter saturation voltage IC=3A; IB=1.33A 1.0 V VBEsat Base-emitter saturation voltage IC=3A; IB=1.33A 1.3 V hFE DC current gain IC=0.1A ; VCE=5V VCE=rated; VBE=0 TC=125℃ VEB=6V; IC=0 6 13 30 0.5 1.0 10 ICES Collector cut-off current mA IEBO Emitter cut-off current mA Switching times μs μs ts Storage time ICM = 3 A; IB(end) = 1A LB = 12μH 6.5 tf Fall time 0.7 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU506 Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3