BU506DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU506DF DESCRIPTION ・With TO-220Fa package ・High voltage ・High-speed switching ・With integrated efficiency diode APPLICATIONS ・Horizontal deflection circuits of colour TV receivers. ・Line-operated switch-mode applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Base current(peak) Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 6 5 8 3 5 20 150 -65-150 UNIT V V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU506DF CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat hFE-1 hFE-2 ICES IEBO VF PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage CONDITIONS IC=100mA; IB=0,L=25mH IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0.1A ; VCE=5V IC=3A ; VCE=5V VCE=rated; VBE=0 Tj=125℃ VEB=6V; IC=0 IF=3A; 1.5 6 2.25 0.5 1.0 200 2.2 mA mA V 13 MIN 700 1.0 1.3 30 TYP. MAX UNIT V V V Switching times ts tf Storage time Fall time ICM = 3 A; IB(end) = 1A LB = 12μH 6.5 0.7 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU506DF Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3