BU508A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508A DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of large screen colour TV receivers. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1200 700 10 8 15 125 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE ts tf fT PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Storage time Fall time Transition frequency CONDITIONS IE=10mA; IC=0 IC=100mA; IB=0 IC=4.5A; IB=2A IC=4.5A; IB=2A VCE=1500V; VBE=0 TC=125°C VEB=5V; IC=0 IC=1A ; VCE=5V 8 7 0.55 7 μs μs MHz MIN 10 700 1.0 1.3 1.0 2.0 0.1 TYP. MAX UNIT V V V V mA mA IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3μH IC=0.1A ; VCE=5V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508A Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3