BU508AFI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AFI DESCRIPTION ・With TO-3PML package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection of colour TV receivers PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICP Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 10 8 15 50 150 -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU508AFI TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0, 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2 A 1.3 V hFE DC current gain IC=1A; VCE=5V VCE=1500V; VBE=0 TC=125℃ VEB=5V; IC=0 8 1.0 2.0 0.1 ICES Collector cut-off current mA IEBO Emitter cut-off current mA fT Transition frequency IC=0.1A; VCE=5V;f=5MHz 7 MHz μs μs ts Storage time tf Fall time IC=4.5A ; VCC=140V IB=1.8A; LC=0.9mH LB=3μH 7 0.55 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508AFI Fig.2 Outline dimensions 3