BU508AW

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AW DESCRIPTION ・With TO-247 package ・High voltage ・High speed switching APPLICATIONS ・For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 1500 700 8 15 4 6 125 150 -65~150 UNIT V V A A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU508AW TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125℃ VEB=6.0V; IC=0 1.1 1.0 2.0 10 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=100mA ; VCE=5V 6 13 30 fT Transition frequency IE=0.1A ; VCE=5V 7 MHz Cob Output capacitance VCB=10V;IE=0;f=1.0MHz 125 pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508AW Fig.2 Outline dimensions 3