BU508D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION ・With TO-3PN package ・High voltage ・Built-in damper diode APPLICATIONS ・For use in large screen colour deflection circuits. PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 700 5 5 8 2.5 125 150 -65-150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V VCEsat VBEsat Collector-emitter saturation voltage IC=4.5A; IB=2.0A IC=4.5A; IB=2.0A 1.0 V Base-emitter saturation voltage 1.5 V hFE DC current gain IC=1A ; VCE=5V 8 ICES Collector cut-off current VCE=1500V; VBE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA VF Diode forward voltage IF=4.0A 2.0 V fT Cob Transition frequency IC=0.1A ; VCE=5V IE=0;VCB=10V;f=1MHz 4 MHz Collector capacitance 125 pF μs μs ts Storage time IC=4.5A ; IB=1.4A LB=10μH 7 tf Fall time 1.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU508D Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3