BU522

INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor BU522 DESCRIPTION ·High Voltage ·Low Collector Saturation Voltage: VCE(sat)= 2.5V @ IC= 4A APPLICATIONS ·Designed for use in ignition circuit. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCER(SUS) VCER VCBO VEBO IC IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 350 375 400 5 7 2 75 150 -55~150 UNIT V V V V A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.67 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon Darlington NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 1.0A; RBE= 270Ω MIN TYP. BU522 MAX UNIT VCER(SUS) Collector-Emitter Sustaining Voltage 350 V VCE(sat) VBE(sat) ICER ICBO Collector-Emitter Saturation Voltage IC= 4A; IB= 80mA B 2.5 V Base-Emitter Saturation Voltage IC= 4A; IB= 80mA B 2.5 V Collector Cutoff Current VCR= 350V; RBE= 270Ω VCB= 400V; IE= 0 1.0 mA Collector Cutoff Current 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 40 mA hFE DC Current Gain IC= 2.5A; VCE= 5V 250 fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 5V 7.5 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 150 pF isc Website：www.iscsemi.cn