BU526

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU526 BU526A DESCRIPTION ・With TO-3 package ・Short switching times. ・High dielectric strength. APPLICATIONS ・For use in power supply units of TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER Collector-base voltage BU526 VCEO Collector-emitter voltage BU526A VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 460 7 8 10 86 175 -65~175 V A A W ℃ ℃ CONDITIONS Open emitter VALUE 900 400 V UNIT V THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.04 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER BU526 V(BR)CEO Collector-emitter breakdown voltage BU526A V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain IE=10mA; IC=0; IC=5A;IB=1 A IC=8A;IB=3 A IC=5A;IB=1 A VCB=900V;IE=0 VEB=7V;IC=0 IC=1A ; VCE=5V IC=50mA; IB=0; CONDITIONS BU526 BU526A MIN 400 TYP. MAX UNIT V 460 7 1.5 5.0 1.6 0.1 0.1 15 45 V V V V mA mA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU526 BU526A Fig.2 Outline dimensions 3