BU607

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU607 DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed: tf= 0.75μs(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 330 330 150 6 7 10 4 60 150 -65~150 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU607 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.65A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.65A B 1.3 V hFE DC Current Gain IC= 2A; VCE= 5V; 15 ICEV Collector Cutoff Current VCE= 330V; VBE= -1.5V 15 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 400 mA fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1MHz 10 MHz tf Fall Time IC= 5A; IB1= -IB2= 0.65A, VCC= 40V 0.75 μs isc Website：www.iscsemi.cn 2