BU608

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU608 DESCRIPTION ・With TO-3 package ・High voltage ・Wide area of safe operation APPLICATIONS ・For TV horizontal deflection output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 200 -65~200 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 400 200 7 7 2.5 W UNIT V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=1mA; IE=0 IE=1mA; IC=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=400V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V 15 5 MIN 200 400 7 TYP. BU608 MAX UNIT V V V 1.0 1.5 10 10 V V μA μA 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU608 Fig.2 Outline dimensions 3