BU626A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU626A DESCRIPTION ・With TO-3 package ・Short switching times. ・High dielectric strength. APPLICATIONS ・For use in power supply units of TV receives. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1000 400 7 10 15 100 175 -65~175 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.5 UNIT K/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU626A MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0; 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0; 7 V VCEsat Collector-emitter saturation voltage IC=8A;IB=2.5 A 3.3 V VBEsat Base-emitter saturation voltage IC=8A;IB=2.5 A 2.2 V ICES Collector cut-off current VCE=1000V;VBE=0 1.0 mA hFE-1 DC current gain IC=10A ; VCE=1.5V 10 hFE-2 DC current gain IC=2.5A ; VCE=10V 15 fT Transition frequency IC=0.1A ; VCE=10V 6 MHz μs tf Fall time IC=8A;IB1=-IB2=2.5A; 1 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU626A Fig.2 Outline dimensions 3