BU705DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU705DF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Integrated Efficiency Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current- Continuous Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 1500 700 5 2.5 4 2 4 29 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 4.37 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU705DF TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0;L= 25mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.9A B 5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.9A B 1.3 0.15 1 1 V ICES Collector Cutoff Current VCE= VCESmax ; VBE= 0 VCE= VCESmax ; VBE= 0; TJ=125℃ VEB= 5V ; IC= 0 mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 2A ; VCE= 5V 2.2 VECF C-E Diode Forward Voltage IF= 3A 1.8 V COB Output Capacitance IE= 0; VCB= 10V; ftest= 0.1MHz 65 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 5MHz 7 MHz Switching Times tstg Storage Time IC= 2A ;IB(end)= 0.9A; LB= 15μH 7.5 μs tf Fall Time 0.9 μs isc Website：www.iscsemi.cn 2