BU806

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU806 DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage: VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEV VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 400 400 200 6 8 15 2 60 150 -65~150 UNIT V V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.08 70 UNIT ℃/W ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU806 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.4 V ICES Collector Cutoff Current VCE= RatedVCBO; VBE= 0 0.1 mA ICEV Collector Cutoff Current VCE= RatedVCEV; VBE(off)= 6V 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.0 V Switching Times ton Turn-On Time IC= 5A; IB1= 50mA;IB2= -0.5A VCC= 100V 0.35 μs ts Storage Time 0.55 μs tf Fall Time 0.20 μs isc Website：www.iscsemi.cn 2