BU826

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU826 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 375V(Min) ·High Switching Speed APPLICATIONS Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage(VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range VALUE 800 375 8 6 8 0.5 125 150 -65~150 UNIT V V V A A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU826 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 375 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 55mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 55mA VCE= RatedVCES; RBE= 0 VCE= RatedVCES; RBE= 0,TC= 125℃ VEB= 8V; IC= 0 2.2 1.0 2.0 150 V ICES Collector Cutoff Current mA IEBO Emitter Cutoff Current mA Switching Times ton Turn-On Time VCC= 250V, IC= 2.5A, IB1= 55mA, IB2= -1A; tp= 20μs; Duty Cycle≤ 1% 1.6 μs ts Storage Time 3.1 μs tf Fall Time 1.2 μs isc Website：www.iscsemi.cn 2