Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU903
DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For color TV horizontal deflection circuits.
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1350 550 7 6 125 150 -65~150 UNIT V V V A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction case MAX 1.0 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU903
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0; IE=10mA; IC=0; IC=3.2A;IB=0.8A IC=3.2A;IB=0.8A VCB=1300V;IE=0 VEB=5V;IC=0 IC=1.5A ; VCE=5V 8 MIN 550 7 2.0 1.3 1.0 0.1 TYP. MAX UNIT V V V V mA mA
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU903
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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