BU908

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU908 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 700V (Min) ·High Power Dissipation: PD= 125W@TC= 25℃ APPLICATIONS ·Designed for use in color TV horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7 V IC PC Collector Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 8 A 125 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU908 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.2A; IB= 0.8A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.2A; IB= 0.8A VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ VEB= 5.0V; IC= 0 1.3 0.1 2.0 0.1 V ICES Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 1.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 7 MHz isc Website：www.iscsemi.cn 2