BU911

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU911 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) APPLICATIONS ·Solenoid/ relay drivers ·Motor control ·Electronic automotive ignition ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-peak Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 450 400 5 6 10 1 60 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.08 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU911 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA B 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 200mA B 2.5 1.0 5.0 1.0 V ICES Collector Cutoff Current VCE= 450V;VBE= 0 VCE= 450V;VBE= 0;Tj= 125℃ VCE= 400V; IB= 0 mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.5 V isc Website：www.iscsemi.cn