BU920PFI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU920PFI DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE= 0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current-peak Base Current Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range VALUE 400 350 5 10 15 5 55 150 -65~150 UNIT V V V A A A W ℃ ℃ PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.27 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BU920PFI TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA B 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA B 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA B 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 140mA B 2.5 0.25 0.5 0.25 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE= 400V; VBE= 0;Tj= 125℃ VCE= 350V; IB= 0 mA ICEO Collector Cutoff Current mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA VECF C-E Diode Forward Voltage IF= 7A 2.5 V isc Website：www.iscsemi.cn