BU926

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU926 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) ·Low Saturation Voltage : VCE(sat)= 1.5V (Max)@IC= 5A APPLICATIONS ·Designed for use in high-voltage , high-speed , power switching in inductive circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Base-Emitter Voltage 850 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC ICM Collector Current- Continuous 8 A Collector Current-Peak 10 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 2 A PC 120 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 1.04 UNIT ℃/W Rth j-c isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU926 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V ICEX Collector Cutoff Current VCE= 850V; VBE= -2.5V 0.5 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V; ftest= 1MHz 4 MHz Switching Times ton Turn-On Time 1.0 μs tstg Storage Time IC= 5A ;IB1= -IB2= 1A; VCC= 250V 3.2 μs tf Fall Time 0.8 μs isc Website：www.iscsemi.cn 2