BU931P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931P DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Base current -peak Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 5 15 30 1 5 135 175 -65~175 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACT ERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU931P MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH 400 V VCEsat-1 VCEsat-2 Collector-emitter saturation voltage IC=7A ;IB=0.07A IC=8A; IB=0.1 A 1.6 V Collector-emitter saturation voltage 1.8 V VCEsat-3 Collector-emitter saturation voltage IC=10A; IB=0.25 A 1.8 V VBEsat-1 Base-emitter saturation voltage IC=7A ;IB=0.07A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.1 A 2.4 V VBEsat-3 Base-emitter saturation voltage IC=10A; IB=0.25 A VCE =500V; VBE=0; Tj=125℃ VCE =450V; IB=0; Tj=125℃ VEB=5V; IC=0 2.5 0.1 0.5 0.1 0.5 20 V ICES ICEO Collector cut-off current mA Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=10V 300 VF Diode forward voltage IF=10A 2.5 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU931P Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3