BU931T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931T DESCRIPTION ·With TO-220C package ·Fast switching speed ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions.. ·High voltage ignition coil driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 5 10 15 1 5 125 175 -65~175 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.2 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. BU931T MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=10mH 400 V VCEsat-1 Collector-emitter saturation voltage IC=7A ;IB=0.07A 1.6 V VCEsat-2 Collector-emitter saturation voltage IC=8A; IB=0.1 A 1.8 V VBEsat-1 Base-emitter saturation voltage IC=7A ;IB=0.07A 2.2 V VBEsat-2 Base-emitter saturation voltage IC=8A; IB=0.1 A VCE =500V; VBE=0; Tj=125℃ VCE =450V; IB=0; Tj=125℃ VEB=5V; IC=0 2.4 10 500 0.1 0.5 20 V ICES Collector cut-off current μA ICEO Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=10V 300 VF Diode forward voltage IF=10A 2.5 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU931T Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3